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[Analysis Case] Composition and Thickness Evaluation of Ultra-Thin SiON Films

Estimation of film thickness using the average free path of photoelectrons.

For extremely thin films with a thickness of a few nanometers or less, such as natural oxide films on silicon wafers and silicon nitride thin films, we will measure the Si2p spectrum of the sample's surface. By performing waveform analysis on the obtained spectrum, we will determine the proportion of each bonding state and estimate the film thickness from this result and the average free path of photoelectrons (Equation 1).

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Analysis of LSI, memory, oxide semiconductors, power devices, optical devices, and electronic components.

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