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[Analysis Case] SSDP-SIMS Analysis on SiC Substrates

c0284.jpg

[Analysis Case] SSDP-SIMS Analysis on SiC Substrates

c0284.jpg
c0284.jpg

It is possible to obtain the dopant concentration profile from the SiC substrate side.

In the SiC power MOSFET (Figure 1), the concentration distribution of the dopant element Al in the SiC beneath the gate pad was evaluated using SIMS from both the surface side and the backside (Figure 2). Regardless of the direction of analysis, the distribution beyond a depth of approximately 0.5 μm also matches well, suggesting that the spread of the Al concentration distribution reflects the actual elemental distribution rather than being measurement-induced. SSDP-SIMS analysis is possible even on hard substrates like SiC, which are difficult to process. Please feel free to consult us first.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/10…

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Analysis of power devices.

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[Analysis Case] SSDP-SIMS Analysis on SiC Substrate_C0284

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