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[Analysis Case] Evaluation of Contact Electrodes for SiC Power MOSFETs

c0292.jpg

[Analysis Case] Evaluation of Contact Electrodes for SiC Power MOSFETs

c0292.jpg
c0292.jpg

Identification of the interface between contact electrodes and SiC layer, and evaluation of elemental distribution.

We will introduce an analysis case of commercially available SiC power MOSFET devices. In SiC materials, it is essential to control the materials in a system that includes not only Si but also C, which differs from the conventional manufacturing methods of Si semiconductors. In the process of forming ohmic junctions between the contact electrodes and the SiC layer, we evaluated the elemental distribution and crystal phases, including C, using EDX/EELS analysis with TEM and electron diffraction.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/80…

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Analysis of power devices.

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[Analysis Case] Evaluation of Contact Electrodes for SiC Power MOSFET_C0292

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