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[Analysis Case] Investigation of Defective Bipolar Transistors (IGBT)

C0153.jpg
C0153.jpg

[Analysis Case] Investigation of Defective Bipolar Transistors (IGBT)

Identification of failure locations using an emission microscope with a high voltage power supply.

By overlaying the luminescent image and the IR image, it is possible to identify leak locations under microscopic observation. If there are large-scale appearance anomalies such as cracks or electrostatic breakdown, abnormalities can also be confirmed with an IR microscope. Additionally, if luminescence cannot be detected due to light shielding of the emitter electrode, the collector electrode is removed, and near-infrared light is detected from the collector side. An example is presented where a high-voltage power supply capable of applying up to 2000V is used to operate a power device with high voltage resistance and low leakage current, and the failure location is identified using an emission microscope.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/15…

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Analysis of power devices.

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[Analysis Case] Investigation of Defective Bipolar Transistor (IGBT) C0153

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