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[Analysis Case] Composite Evaluation of the Active Layer of SiC Power MOSFETs

c0291.jpg

[Analysis Case] Composite Evaluation of the Active Layer of SiC Power MOSFETs

c0291.jpg
c0291.jpg

Evaluate the shape of the active layer and the dopant.

We will introduce a case study evaluating the distribution of the diffusion layer in commercially available SiC power MOSFET devices. In the SiC MOSFET manufacturing process, the channel is formed through ion implantation, activation heat treatment, and epitaxial layer formation. During the active layer formation process, we understood the device structure through TEM observation and evaluated the diffusion layer distribution of the p-type/n-type cross-section and the epitaxial layer from SCM measurements, as well as the depth concentration distribution of dopant elements (N, Al, P) from SIMS measurements. Measurement methods: SIMS, SCM, TEM Product field: Power devices Analysis purpose: Trace concentration evaluation, shape evaluation, product investigation For more details, please download the materials or contact us.

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Analysis of power devices.

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[Analysis Case] Evaluation of the Active Layer of SiC Power MOSFETs using SIMS, SCM, and TEM_C0291

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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!

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