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[Analysis Case] SiC by SIMS

C0250.jpg

[Analysis Case] SiC by SIMS

C0250.jpg
C0250.jpg

Imaging SIMS allows for the evaluation of localized elements.

We disassembled a commercially available SiC Schottky diode and conducted imaging SIMS measurements to evaluate the concentration distribution of the dopant element Al in a 40μm square area to a depth of 0.5μm. From the data processing after the imaging SIMS measurements, we extracted the depth-wise concentration distribution of Al localized within the sample surface and present a case study comparing the concentration distributions for each pattern.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/11…

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Analysis of power devices.

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[Analysis Case] Depth Direction Analysis of Al in SiC Schottky Diode by SIMS_C0250

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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!

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