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[Analysis Case] Ultra-high Sensitivity Measurement of Impurities in Silicon Using SIMS

c0354.jpg

[Analysis Case] Ultra-high Sensitivity Measurement of Impurities in Silicon Using SIMS

c0354.jpg
c0354.jpg

We will enhance the sensitivity and evaluate the concentration distribution at the ppt level.

The detection sensitivity in SIMS analysis depends on the amount of sputtered sample per unit time. Depending on the element, significantly improved sensitivity can be achieved by limiting the impurities to one element, allowing evaluation down to ppt (parts per trillion) levels of less than 5E13 atoms/cm3, which is effective for assessing low-concentration impurities in IGBT devices and high-purity wafers. This document presents examples of ultra-high sensitivity evaluations of low-concentration impurities in silicon.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/44…

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Analysis of solar cells, power devices, LSI, and memory.

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[Analysis Case] Ultra-high Sensitivity Measurement of Impurities in Si by SIMS_C0354

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