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[Analysis Case] Evaluation of Ultra-Shallow Implant Profiles by SIMS

C0009.jpg

[Analysis Case] Evaluation of Ultra-Shallow Implant Profiles by SIMS

C0009.jpg
C0009.jpg

Evaluation of dopant distribution and junctions is possible even in extremely shallow regions.

The miniaturization of devices has increased the need for evaluating the depth distribution of impurities in extremely shallow regions. To conduct an accurate assessment, SIMS analysis using a primary ion beam with lower energy (below 1 keV) is required. Figure 1 shows examples of measurements of Si wafers implanted with BF2+ 1 keV, P+ 1 keV, and As+ 1 keV, using a primary ion beam energy of 250 eV to 300 eV.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/17…

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Analysis of LSI and memory.

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[Analysis Case] Evaluation of Ultra-Shallow Implant Profiles by SIMS_C0009

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