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[Analysis Case] Evaluation of SiC Power MOSFET Dopants by SIMS

C0249.jpg

[Analysis Case] Evaluation of SiC Power MOSFET Dopants by SIMS

C0249.jpg
C0249.jpg

Imaging SIMS enables the evaluation of localized elements.

We disassembled a commercially available SiC power MOSFET and conducted imaging SIMS measurements to evaluate the concentration distribution of the dopant elements Al, N, and P in a 20 µm square area to a depth of 0.5 µm. We will present a case where we extracted the depth profile concentration distribution of Al, N, and P localized within the sample surface from the data processing after the imaging SIMS measurements.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/25…

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Analysis of power devices.

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[Analysis Case] Evaluation of Dopants in SiC Power MOSFETs Using SIMS_C0249

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