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[Analysis Case] Dopant Investigation in NPT-IGBT Using SIMS

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[Analysis Case] Dopant Investigation in NPT-IGBT Using SIMS

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c0256.jpg

Evaluation of localized elements is possible with imaging SIMS.

Imaging SIMS measurements were conducted on a 50μm square area on the emitter side of the NPT-IGBT. Figure 1 shows the ion images of 11B and As obtained from the analysis. It can be seen that 11B and As are injected into the same area. Additionally, while conventional analysis calculates the average concentration of each element over the entire detection area, imaging SIMS measurements allow for the extraction of partial depth profiles, enabling the evaluation of the concentration distribution of dopants localized in the plane (Figure 2).

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Analysis of power devices.

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[Analysis Case] Dopant Investigation in NPT-IGBT by SIMS_C0256

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