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[Analysis Case] Photoluminescence Mapping Measurement of SiC Diodes

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[Analysis Case] Photoluminescence Mapping Measurement of SiC Diodes

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Detection cases of stacking faults in SiC.

SiC has been actively researched and utilized in recent years for applications such as power devices. Due to the various polytypes of SiC, there is a problem where stacking defects, which can lead to disordered stacking arrangements, easily occur. One method for detecting these defects is photoluminescence (PL), which analyzes the light emitted when a sample is stimulated with light. We will introduce a case where mapping measurements were conducted to detect light emission caused by defects.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/10…

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Analysis of power devices.

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[Analysis Case] Photoluminescence Mapping Measurement of SiC Schottky Diode_C0254

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