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[Analysis Case] Depth Profile Concentration Analysis of Impurities in GaN-based LEDs Using SIMS

Measurements will be taken under analysis conditions suited to the purpose.

We will introduce a case where the depth concentration distribution of dopant elements such as Mg and Si in GaN-based LED structures was evaluated using multiple analysis modes. By selecting the optimal analysis mode according to the purpose in SIMS analysis, more precise evaluations can be achieved, so please feel free to consult with us.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/25…

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For detailed data, please refer to the catalog.

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Applications/Examples of results

Analysis of lighting, power devices, and optical devices.

[Analysis Case] Depth Profile Concentration Analysis of Impurities in GaN-based LED Structures Using SIMS_C0251

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