[Analysis Case] Evaluation of Gate Oxide Film on SiC Substrate
Evaluate film thickness, density, and bonding state.
SiC power devices are expected to reduce power loss and handle large power in a compact form as power conversion elements. We will introduce a case where the thickness and density of the gate oxide film, necessary for improving the characteristics of the device, were evaluated using XRR (X-ray reflectivity) and the bonding state was assessed using XPS (X-ray photoelectron spectroscopy).
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Applications/Examples of results
Analysis of power devices.