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[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS 2

c0298.jpg

[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS 2

c0298.jpg
c0298.jpg

Measurements will be taken according to the analysis conditions suited to the purpose.

This paper presents examples of evaluating the depth concentration distribution of the dopant elements N, Al, and P in commercially available SiC power MOSFETs using multiple analysis modes. Depending on the analysis objectives, it is possible to measure multiple elements simultaneously without measuring each element separately under optimal conditions. Examples are provided for cases of simultaneous multi-element measurement and measurements focused on each individual element.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/24…

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Analysis of power devices.

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[Analysis Case] Depth Direction Analysis of Dopant Elements in SiC Using SIMS 2_C0298

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