一般財団法人材料科学技術振興財団 MST Official site

[Analysis Case] Diffusion Evaluation of Ga and Al in Si Substrate using SSDP-SIMS

Measurement avoiding the influence of high concentration layers using SSDP-SIMS.

From the perspective of cost reduction, the use of high-resistance Si substrates for power devices made of GaN is expected. However, it is said that if Al and Ga diffuse to the surface of the Si substrate during high-temperature film formation, a low-resistance layer is formed, leading to leakage. Therefore, we will introduce a case where SIMS analysis was conducted to evaluate the presence or absence of Al and Ga diffusion into the Si substrate. To accurately assess trace diffusion, measurements were conducted from the Si substrate side towards the GaN layer.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/37…

basic information

For detailed data, please refer to the catalog.

Price information

-

Delivery Time

Applications/Examples of results

Analysis of lighting, power devices, and optical devices.

Distributors

Recommended products