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[Analysis Case] Diffusion Evaluation of Ga and Al in Si Substrate using SSDP-SIMS

c0267.jpg

[Analysis Case] Diffusion Evaluation of Ga and Al in Si Substrate using SSDP-SIMS

c0267.jpg
c0267.jpg

Measurement avoiding the influence of high concentration layers using SSDP-SIMS.

From the perspective of cost reduction, the use of high-resistance Si substrates for power devices made of GaN is expected. However, it is said that if Al and Ga diffuse to the surface of the Si substrate during high-temperature film formation, a low-resistance layer is formed, leading to leakage. Therefore, we will introduce a case where SIMS analysis was conducted to evaluate the presence or absence of Al and Ga diffusion into the Si substrate. To accurately assess trace diffusion, measurements were conducted from the Si substrate side towards the GaN layer.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/37…

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Analysis of lighting, power devices, and optical devices.

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[Analysis Case] Evaluation of Ga and Al Diffusion into Si Substrate Using SSDP-SIMS_C0267

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