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[Analysis Case] Breakdown Observation of 600V Rated SiC Diode

C0183.jpg

[Analysis Case] Breakdown Observation of 600V Rated SiC Diode

C0183.jpg
C0183.jpg

Consistent analysis from preprocessing to luminescence location identification.

By using a high-voltage power supply (capable of applying up to 2000V), it is possible to induce breakdown in diodes with high breakdown voltage. In this case, a SiC Schottky diode with a breakdown voltage of 600V was operated, and by applying high voltage in the reverse direction, breakdown was induced. After removing the cathode electrode through polishing, emission microscopy observations were conducted to identify the location of the breakdown current generation. Commercially available products were used for the measurements.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/14…

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Analysis of power devices.

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[Analysis Case] Breakdown Observation of 600V Rated SiC Schottky Diode_C0183

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