一般財団法人材料科学技術振興財団 MST Official site

[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS

It is possible to evaluate the depth distribution of B, Al, N, P, and As in SiC with high sensitivity.

SiC is used as a power device material due to its physical properties, but unlike Si, the diffusion of dopants after thermal treatment following ion implantation is difficult. Therefore, it is necessary to control the distribution in the depth direction through multi-step ion implantation. SIMS analysis can evaluate impurity concentrations in the depth direction with high sensitivity (below ppm), making it suitable for assessing the distribution of dopant elements in SiC. It is also possible to evaluate the distribution of light elements (such as H, C, O, F, etc.). Please contact us regarding any elements you would like to evaluate.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/25…

basic information

For detailed data, please refer to the catalog.

Price information

-

Delivery Time

Applications/Examples of results

Analysis of power devices.

[Analysis Case] Depth Direction Analysis of Dopant Elements in SiC by SIMS 1_C0247

PRODUCT

[Analysis Case] Depth Direction Analysis of Dopant Elements in SiC Using SIMS 2_C0298

PRODUCT

Distributors

Recommended products