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[Analysis Case] Evaluation of Silicon (Si) Oxide Film State

c0261.jpg

[Analysis Case] Evaluation of Silicon (Si) Oxide Film State

c0261.jpg
c0261.jpg

It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.

In depth-direction analysis of molecular information obtained by TOF-SIMS, (1) the depth resolution is good, (2) it is possible to distinguish the chemical states of inorganic materials such as oxides, nitrides, fluorides, carbides, alloys, and metals, (3) evaluation of trace states is possible, (4) monitoring of OH is possible, (5) relative comparisons between samples (film thickness, composition) are possible, and (6) image analysis allows for a visual capture of the distribution of states at the surface level of a few nanometers. We will summarize the results of natural oxide films and oxide films. Measurement method: TOF-SIMS Product field: LSI, memory Analysis purpose: evaluation of chemical bonding states, evaluation of composition distribution, thickness of corrosion layers For more details, please download the materials or contact us.

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Analysis of LSI and memory.

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[Analysis Case] Evaluation of Silicon (Si) Oxide Film State_C0261

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