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[Analysis Case] High-Precision Analysis of Ultra-Shallow Dopant Distribution Using SIMS

C0006.jpg

[Analysis Case] High-Precision Analysis of Ultra-Shallow Dopant Distribution Using SIMS

C0006.jpg
C0006.jpg

Can be evaluated with high reproducibility.

Due to the miniaturization of devices, it is necessary to evaluate the depth distribution of impurities in extremely shallow regions. To perform an accurate evaluation, SIMS analysis using a primary ion beam with lower energy (below 1 keV) is required. In this study, the relative standard deviation of the surface density of B calculated from six measurements conducted over multiple days using a 1 keV oxygen ion beam on Si wafers implanted with B+ at low energy was found to be less than 3%, demonstrating that high reproducibility can be achieved in the evaluation of extremely shallow impurity distributions, similar to conventional SIMS analysis.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/17…

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Analysis of LSI, memory, oxide semiconductors, power devices, optical devices, and electronic components.

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[Analysis Case] High-Precision Analysis of Ultra-Shallow Dopant Distribution by SIMS_C0006

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