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[Analysis Case] Evaluation of B Penetration Amount from SSDP-SIMS Gate to Substrate

C0028.jpg

[Analysis Case] Evaluation of B Penetration Amount from SSDP-SIMS Gate to Substrate

C0028.jpg
C0028.jpg

Measurement avoiding the effects of surface irregularities and high concentration layers using SSDP-SIMS.

By conducting SIMS analysis (SSDP-SIMS) from the substrate side, it is possible to obtain measurements that are not affected by the knock-on effects from the high-concentration layer on the surface due to surface roughness and sputtering. We evaluated the amount of boron penetration from the gate electrode (B-doped Poly-Si) into the substrate. Measurements from the substrate side showed no effects from knock-on, indicating that a more accurate evaluation of the penetration amount is possible. Thus, SSDP-SIMS is effective for assessing the barrier properties of barrier metals, the incorporation of metals into Low-k films, and the evaluation just beneath the rough silicide.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/32…

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Analysis of LSI and memory.

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[Analysis Case] Evaluation of B Penetration from Gate Electrode to Substrate using SSDP-SIMS_C0028

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