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[Analysis Case] Evaluation of Metal Impurities in the Metal Film and Interface of the Device

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[Analysis Case] Evaluation of Metal Impurities in the Metal Film and Interface of the Device

Impurities in films and interfaces such as plating can be evaluated using TOF-SIMS.

Impurities from components of the film formation device, target materials, and plating solutions can contaminate the device and have adverse effects, making the qualitative assessment of impurities on surfaces, within films, and at interfaces important. TOF-SIMS can sensitively evaluate unknown elements present on surfaces, within films, and at interfaces in a single measurement due to the following three characteristics: 1. For metallic elements, ions from m/z 1 to 800 can be detected simultaneously in one measurement. 2. Detection sensitivity of a few ppm can be achieved (varies depending on materials and ions). 3. The use of a sputter gun allows for the evaluation of depth distribution.

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Measurement Method: [TOF-SIMS] Time-of-Flight Secondary Ion Mass Spectrometry Product Fields: LSI & Memory, Power Devices, Optical Devices, Electronic Components, Manufacturing Equipment & Parts, Oxide Semiconductors Analysis Purpose: Failure Analysis, Defect Analysis, Product Investigation

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Analysis of LSI, memory, power devices, optical devices, electronic components, manufacturing equipment and parts, and oxide semiconductors.

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[Analysis Case] Evaluation of Metal Impurities in the Metal Film and Interface of the Device_C0638

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