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[Analysis Case] Measurement of Partial Density of States of GaN

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[Analysis Case] Measurement of Partial Density of States of GaN

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Information about valence bands and gap states can be obtained by element.

Soft X-ray emission spectroscopy (SXES) using synchrotron radiation is widely used as a method to evaluate the electronic states of materials, as it allows for the direct acquisition of the partial density of states (pDOS) near the Fermi level for each element constituting the material. Furthermore, the characteristics of this method include: 1. Information from the bulk can be obtained. 2. It can be evaluated without being affected by charging effects, even for insulators. 3. The detection limit is low (<1 atomic%). These features make it particularly effective for evaluating materials containing light elements (such as B, C, N, O). In this document, we will introduce the SXES spectrum of a GaN substrate as a measurement example.

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Measurement method: XAFS・SXES Product fields: Lighting, oxide semiconductors, LSI, memory Analysis purpose: Evaluation of electronic states

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Analysis of lighting, oxide semiconductors, LSI, and memory.

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[Analysis Case] Measurement of Partial Density of States for GaN_C0511

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