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Analysis Case: Analysis of Defect Levels in Gallium Nitride

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Analysis Case: Analysis of Defect Levels in Gallium Nitride

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You can obtain various physical property information such as point defect formation energy, charge, and optical transitions!

Our organization conducts an analysis of defect levels in wide bandgap semiconductor gallium nitride (GaN) using first-principles calculations. Gallium nitride (GaN), a wide bandgap semiconductor, is primarily used in the field of power devices, and in recent years, there has been an increasing demand for applications such as rapid chargers and 5G communication base stations. Here, we present a case study analyzing the defect levels formed by nitrogen vacancies (VN) in GaN using first-principles calculations. [Measurement and Processing Methods] ■ [PL] Photoluminescence Method ■ Computational Science, AI, Data Analysis *For more details, please download the PDF or feel free to contact us.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/64…

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[Analysis Case] Analysis of Defect Levels in Wide Bandgap Semiconductors - Gallium Nitride Using First-Principles Calculations_C0680

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