◆ANNEAL◆ Wafer Annealing Equipment

High-temperature processing up to 1000°C is possible with the heating stage installed in a high vacuum water-cooled SUS chamber. The mass flow controller can be expanded to a maximum of three systems, allowing for firing operations at precisely adjusted process gas pressures (with the APC automatic process control system option). Additionally, there are many options available, including a front viewport, dry scroll pump, special substrate holder, and additional thermocouples. The heater wire has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp: Max 500°C - C/C composite: Max 1000°C (in vacuum, inert gas only) - SiC coating: Max 1000°C (in vacuum, inert gas, O2) ◉ Substrate size: Φ2 to 4 inches ◉ SUS304 water-cooled chamber ◉ Achievable pressure: 5x10^-5 Pascal ◉ Up to 3 mass flow controllers ◉ 7" HMI touch panel ◉ High-precision wide-range vacuum gauge ◉ USB port with PC data logging function ◉ Turbo molecular and rotary pump (*can be changed to dry pump) ◉ K-type thermocouple included

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