Sputtering device 'nanoPVD-S10A'
High-performance, cost-effective RF/DC magnetron sputtering device for research and development.
High-performance RF/DC magnetron sputtering system ● Achievable pressure: 5 x 10^-5 Pa (*1 x 10^-4 Pa in as fast as 30 minutes!) ● Sputter sources x 3: Continuous multilayer film control, simultaneous film deposition ● Film uniformity ±3% ● Various options: Up/down rotation, heater, cathode for magnetic materials, and more ◉ nanoPVD can be used for various purposes, including up to 3 sputter sources + 3 systems (MFC control), expansion of RF/DC PSU (up to 2 power supplies), continuous multilayer film, and simultaneous deposition from 2 sources (RF/DC or DC/DC only). - Insulating films - Conductive films - Compounds, and more 【Main Features】 ◉ Compatible substrates: 2" (1 to 3 sources) or 4" (1 source) ◉ 2" cathode x up to 3 sources ◉ 7" touch panel for easy operation with PLC automatic process control ◉ High-precision process control with MFC ◉ 1 Ar gas system (standard) + up to 3 additional systems for N2, O2 ◉ Connect to a Windows PC via USB port to create and save recipes for up to 1000 layers and 50 films. Data logging on PC. ◉ Other various options available.
basic information
◉ All operations such as device operation and recipe management are centrally managed via a 7" touch panel. ◉ Users can register film recipes and process controls (vacuum/venting, film deposition time, output/time, automatic control of MFC flow and pressure, cathode switching, shutter opening and closing, heating, vertical lifting and rotation adjustments, etc.) for fully automatic operation (manual operation is also possible) - data logging can be done via a Windows PC. 【Main Specifications】 - RF/DC magnetron method - 2-inch magnetron cathode x 3 sources (standard 1 source) - RF power: 150W automatic matching - DC power: 850W - Compatible substrate sizes: 2-inch, 4-inch - Substrate rotation, vertical lifting, heating (500℃) options - Process gas control: MFC x 1 (Ar standard, up to 3 additional systems: N2, O2) - APC automatic control (capacitance manometer optional) - Quartz oscillator film thickness monitor - Shutter - Dimensions: 804(W) x 570(D) x 600(H) mm - Weight: approximately 70 kg - Power supply: 200VAC 50/60Hz 15A - Chamber size: Φ225 (inner diameter) x 250 mm - Vacuum system: TMP + RP (dry pump optional) - Peltier cooling mechanism
Price range
Delivery Time
Model number/Brand name
S10A
Applications/Examples of results
Various electronic device thin film experiments Supports metal films, insulating films, compound films, and many other applications.
Detailed information
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nanoPVD system front Chamber: Φ259(H) x Φ225(i.d)mm Front view port 7-inch touch screen
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nanoPVD system back Turbo molecular pump + rotary pump Windows PC USB connection for data logging with dedicated software
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front view port
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2-inch Magnetron Cathode (compatible with DC/RF/Pulse DC) x up to 3 sources
Related Videos
Line up（2）
| Model number | overview |
|---|---|
| nanoPVD-S10A | |
| nanoPVD-S10A-WA | Equipped with a stage compatible with Φ6inch and Φ8inch substrates |
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Multi-Target Sputtering Device [MiniLab-125] Compatible with Φ8" SiC Coating Equipped with 1000℃ Heater Stage! Compact Size!
Multifunctional Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Simultaneous deposition of three components + one component Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to three cathodes (Source 1, 2, 3) - Equipped with a 5KW Pulse DC power supply → used with dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC coated heater can achieve Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: All operations can be performed on the touch panel/PC without dispersing control. - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber type can also be manufactured. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
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4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
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【MiniLab】 Evaporation/Sputtering Dual Chamber System
Two thin film experimental devices are connected by a load lock mechanism. Different film deposition devices (sputtering - evaporation, etc.) are seamlessly connected via the load lock. With Moorfield's unique load lock system, connections to the process chamber on the left, right, and rear are also possible (see photo below). 1. MiniLab-E080A (Evaporation Device) - EB evaporation: 7cc crucible x 6 - Resistance heating evaporation x 2 - Organic evaporation limit x 2 2. MiniLab-S060A (Sputtering Device) - Φ2" Magnetron cathode x 4 for simultaneous sputtering - Compatible with both DC and RF power supplies 3. Load Lock Chamber - Plasma etching stage In the load lock chamber, plasma cleaning of the substrate surface is performed using the "RF/DC substrate bias stage," and the company's unique "soft etching" technology allows for a <30W low-power, damage-free plasma etching stage. This enables delicate etching processes that are prone to damage, such as 2D (removal of resists like PMMA), graphene delamination, and etching of Teflon substrates. (*This can also be installed in the main chamber stage.)
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Sputtering/Dual Chamber System【MiniLab-E080A/S060A】
Two thin-film experimental devices are connected via a load lock mechanism. Different film deposition devices (sputtering - evaporation, etc.) are seamlessly connected through the load lock. With Moorfield's unique load lock system, connections to the left, right, and rear process chambers are also possible (see photo below). 1. MiniLab-E080A (Evaporation Device) - EB Evaporation: 7cc crucible x 6 - Resistance Heating Evaporation x 2 - Organic Evaporation Limit x 2 2. MiniLab-S060A (Sputtering Device) - Φ2" Magnetron Cathode x 4 sources for simultaneous sputtering - Compatible with both DC and RF power supplies 3. Load Lock Chamber - Plasma Etching Stage In the load lock chamber, plasma cleaning of the substrate surface is performed using the "RF/DC substrate bias stage," and the company's unique 'soft etching' technology allows for a <30W low-power, damage-free plasma etching stage. This enables delicate etching processes that are prone to damage, such as 2D (removal of resists like PMMA), graphene delamination, and etching of Teflon substrates. (*This can also be installed in the main chamber stage.)
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Multi-functional Sputtering System 【MiniLab-S060】
4 cathodes with Φ2 inch mounted Simultaneous film formation: 3-component simultaneous film formation (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed from the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coat) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
