Vacuum Furnace "Mini-BENCH-prism Ultra-High Temperature Experimental Furnace"
Maximum operating temperature 2000℃ Semi-automatic control Ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace
◉ Maximum operating temperature Max2000℃ ◉ Customizable heater structure: - Cylindrical heater: for sintering samples inside a crucible (for solid, powder, granule, and pellet-shaped samples) - Flat heater: for sintering Φ1" to Φ6" wafers and small chip samples ◉ PLC semi-auto control All operations except temperature adjustment are performed via a touch panel screen. No need for cumbersome valve opening/closing or pump activation; the "vacuum/purge" cycle before sintering and "vent" after sintering are automatically sequenced with one button. ◉ Up to 3 MFCs for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensuring safety during operation Monitoring for cooling water abnormalities, chamber temperature abnormalities, and overpressure abnormalities. Made of SUS, the robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160mm (*installed inside rotary pump housing) Various sample heating experiments, such as ultra-high temperature heating of small samples in laboratories and new material research and development, can be easily conducted. The main unit is compact yet can be used for research and development in various fields.
basic information
◆Basic Specifications◆ - Heater: C/C composite, PG coated C/C composite (carbon furnace), tungsten (metal furnace) - Insulation material: Graphite felt (carbon furnace), tungsten/molybdenum (metal furnace), or W/Mo multilayer shield - Surface heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm - 7-inch touch panel operation - Digital vacuum gauge - MFC maximum 3 systems automatic adjustment (or float meter manual flow adjustment) - Temperature control: Digital programmable controller, C thermocouple - Achievable vacuum level: 1x10-2 Pascal (*only in empty furnace) - Primary power supply specifications: AC200V 50/60HZ three-phase 50A NFB - Cooling water: 8L/min, 0.4Mpa 25 to 30℃ ◆Options◆ - Vacuum exhaust system: Rotary pump, high vacuum pump, valves
Price information
-
Delivery Time
Model number/Brand name
Mini-BENCH-prism
Applications/Examples of results
◆Main Application Areas◆ - Development of new materials - Material analysis - Application in various advanced material developments
catalog（37）
Download All Catalogs
News about this product（6）
-
![Multisource Simultaneous Sputtering Device [MiniLab-S125]](https://image.mono.ipros.com/public/news/image/1/053/100513/IPROS09263764224142550225.jpeg?w=280&h=280)
Multi-Target Sputtering Device [MiniLab-125] Compatible with Φ8" SiC Coating Equipped with 1000℃ Heater Stage! Compact Size!
Multifunctional Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Simultaneous deposition of three components + one component Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to three cathodes (Source 1, 2, 3) - Equipped with a 5KW Pulse DC power supply → used with dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC coated heater can achieve Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: All operations can be performed on the touch panel/PC without dispersing control. - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber type can also be manufactured. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
-
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
-
【MiniLab】 Evaporation/Sputtering Dual Chamber System
Two thin film experimental devices are connected by a load lock mechanism. Different film deposition devices (sputtering - evaporation, etc.) are seamlessly connected via the load lock. With Moorfield's unique load lock system, connections to the process chamber on the left, right, and rear are also possible (see photo below). 1. MiniLab-E080A (Evaporation Device) - EB evaporation: 7cc crucible x 6 - Resistance heating evaporation x 2 - Organic evaporation limit x 2 2. MiniLab-S060A (Sputtering Device) - Φ2" Magnetron cathode x 4 for simultaneous sputtering - Compatible with both DC and RF power supplies 3. Load Lock Chamber - Plasma etching stage In the load lock chamber, plasma cleaning of the substrate surface is performed using the "RF/DC substrate bias stage," and the company's unique "soft etching" technology allows for a <30W low-power, damage-free plasma etching stage. This enables delicate etching processes that are prone to damage, such as 2D (removal of resists like PMMA), graphene delamination, and etching of Teflon substrates. (*This can also be installed in the main chamber stage.)
-
☆★☆ Spatter and Vapor Deposition Source Combined Film Formation Device 【nanoPVD-ST15A】 ☆★☆
Sputter Cathode and Co-evaporation Source Mixed Thin Film Experimental Device. Metal deposition, organic deposition, and sputter cathode are installed in a compact frame. A resistance heating evaporation source (for metal deposition), an organic evaporation source (for organic materials), and magnetron sputtering (for metals and insulating materials) are installed in the chamber, allowing for various thin film experimental setups within a single chamber. ◉ Three combinations available: 1. Sputter Cathode + Resistance Heating Evaporation Source x2 2. Sputter Cathode + Organic Evaporation Source x2 3. Sputter Cathode + Resistance Heating Source x1 + Organic Evaporation Source x1 (*DC sputtering only) 【Specifications】 ◉ Compatible substrates: up to Φ4 inches ◉ Sputtering: 2" cathode x up to 3 sources ◉ Vacuum deposition: Resistance heating evaporation (up to 2), organic evaporation (up to 4) ◉ 7" touch panel operation with PLC automatic process control ◉ APC automatic pressure control ◉ 1 line of Ar gas (standard) + expandable with N2, O2 ◉ Connects to a Windows PC via USB for recipe creation and storage. Data logging on PC ◉ Various other options available ◉ Easy operation with a 7" touch panel and PLC automatic process control
-
Sputtering/Dual Chamber System【MiniLab-E080A/S060A】
Two thin-film experimental devices are connected via a load lock mechanism. Different film deposition devices (sputtering - evaporation, etc.) are seamlessly connected through the load lock. With Moorfield's unique load lock system, connections to the left, right, and rear process chambers are also possible (see photo below). 1. MiniLab-E080A (Evaporation Device) - EB Evaporation: 7cc crucible x 6 - Resistance Heating Evaporation x 2 - Organic Evaporation Limit x 2 2. MiniLab-S060A (Sputtering Device) - Φ2" Magnetron Cathode x 4 sources for simultaneous sputtering - Compatible with both DC and RF power supplies 3. Load Lock Chamber - Plasma Etching Stage In the load lock chamber, plasma cleaning of the substrate surface is performed using the "RF/DC substrate bias stage," and the company's unique 'soft etching' technology allows for a <30W low-power, damage-free plasma etching stage. This enables delicate etching processes that are prone to damage, such as 2D (removal of resists like PMMA), graphene delamination, and etching of Teflon substrates. (*This can also be installed in the main chamber stage.)
