Vacuum Furnace "Mini-BENCH Ultra-High Temperature Tabletop Experimental Furnace"
Tabletop small-sized experimental furnace - space-saving with a maximum operating temperature of 2000℃! We also manufacture metal furnaces for reducing atmospheres.
◉ Tabletop size, space-saving: 328(W) x 220(D) x 250(H) mm (*Reference value for 2-inch chamber) ◉ Customizable heater structure: - Cylindrical heater: For sample sintering in crucibles (for solid, powder, granular, and pellet-shaped samples) - Flat heater: For sintering Φ1" to Φ6" wafers and small chips ◉ Fast heating time of approximately 15 minutes (up to 1500℃), cooling from 1500℃ to 100℃ takes about 40 minutes (in vacuum and gas replacement atmosphere) ◉ High specification & high cost performance ◉ Simple configuration, excellent operability Various sample heating experiments, such as ultra-high temperature heating experiments for small samples in laboratories and new material research and development, can be easily conducted with simple operations. The main unit is compact yet suitable for research and development in various fields.
basic information
◆Device Configuration◆ We will propose the desired configuration according to your budget and purpose. (A) Minimum configuration: Chamber + Temperature control unit (B) Above minimum configuration (A) + Vacuum exhaust system (pump, gauge, valve, vacuum piping) ◆Basic Specifications◆ - Heater: C/C composite, PG coated C/C composite (carbon furnace), tungsten (metal furnace) - Insulation material: Graphite felt (carbon furnace), tungsten/molybdenum (metal furnace), or tungsten/molybdenum multilayer shield (metal furnace) - Temperature control: Digital programmable controller, C thermocouple - Achievable vacuum level: 1x10-2 Pascal (*However, in the case of an empty furnace) - Power specifications: AC200V 50/60HZ three-phase 6KVA - Cooling water: 3L/min, 0.4Mpa 25-30℃ ◆Control Box Specifications◆ - Programmable temperature controller - DC power supply unit or external transformer box - Current and voltage meter - Heater circuit trip switch - Main power switch ◆Options◆ - Vacuum exhaust system - Custom crucible Others
Price information
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Delivery Time
Model number/Brand name
Mini-BENCH furnace
Applications/Examples of results
◆Main Application Areas◆ - Development of new materials - Material analysis - Application in various advanced material developments
Detailed information
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![Multisource Simultaneous Sputtering Device [MiniLab-S125]](https://image.mono.ipros.com/public/news/image/1/2d3/12548/IPROS06137231868342339221.jpeg?w=280&h=280)
【MiniLab-125】 Multi-target sputtering system (compatible with Φ8") equipped with a 1000℃ heater stage (SiC coating)! Compact size!
Multifunctional Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Triple-source simultaneous deposition + Single-source Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to the three-source cathodes (Source 1, 2, 3) - Equipped with a 5KW Pulse DC power supply → Used with dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC-coated heater can achieve Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low-power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: All operations can be performed via touch panel/PC without dispersing control. - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber configurations are also possible. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc., can also be configured.
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![Multisource Simultaneous Sputtering Device [MiniLab-S125]](https://image.mono.ipros.com/public/news/image/1/053/100513/IPROS09263764224142550225.jpeg?w=280&h=280)
Multi-Target Sputtering Device [MiniLab-125] Compatible with Φ8" SiC Coating Equipped with 1000℃ Heater Stage! Compact Size!
Multifunctional Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Simultaneous deposition of three components + one component Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to three cathodes (Source 1, 2, 3) - Equipped with a 5KW Pulse DC power supply → used with dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC coated heater can achieve Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: All operations can be performed on the touch panel/PC without dispersing control. - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber type can also be manufactured. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
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4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
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【MiniLab】 Evaporation/Sputtering Dual Chamber System
Two thin film experimental devices are connected by a load lock mechanism. Different film deposition devices (sputtering - evaporation, etc.) are seamlessly connected via the load lock. With Moorfield's unique load lock system, connections to the process chamber on the left, right, and rear are also possible (see photo below). 1. MiniLab-E080A (Evaporation Device) - EB evaporation: 7cc crucible x 6 - Resistance heating evaporation x 2 - Organic evaporation limit x 2 2. MiniLab-S060A (Sputtering Device) - Φ2" Magnetron cathode x 4 for simultaneous sputtering - Compatible with both DC and RF power supplies 3. Load Lock Chamber - Plasma etching stage In the load lock chamber, plasma cleaning of the substrate surface is performed using the "RF/DC substrate bias stage," and the company's unique "soft etching" technology allows for a <30W low-power, damage-free plasma etching stage. This enables delicate etching processes that are prone to damage, such as 2D (removal of resists like PMMA), graphene delamination, and etching of Teflon substrates. (*This can also be installed in the main chamber stage.)
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Sputtering/Dual Chamber System【MiniLab-E080A/S060A】
Two thin-film experimental devices are connected via a load lock mechanism. Different film deposition devices (sputtering - evaporation, etc.) are seamlessly connected through the load lock. With Moorfield's unique load lock system, connections to the left, right, and rear process chambers are also possible (see photo below). 1. MiniLab-E080A (Evaporation Device) - EB Evaporation: 7cc crucible x 6 - Resistance Heating Evaporation x 2 - Organic Evaporation Limit x 2 2. MiniLab-S060A (Sputtering Device) - Φ2" Magnetron Cathode x 4 sources for simultaneous sputtering - Compatible with both DC and RF power supplies 3. Load Lock Chamber - Plasma Etching Stage In the load lock chamber, plasma cleaning of the substrate surface is performed using the "RF/DC substrate bias stage," and the company's unique 'soft etching' technology allows for a <30W low-power, damage-free plasma etching stage. This enables delicate etching processes that are prone to damage, such as 2D (removal of resists like PMMA), graphene delamination, and etching of Teflon substrates. (*This can also be installed in the main chamber stage.)
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【Endless possibility_thermal engineering...】 Our company sells vacuum thin film devices for semiconductor and electronic device fundamental research, ultra-high temperature heaters for CVD substrate heating, experimental furnaces, temperature measurement equipment, and more. To meet the endless demand for "heat," which is indispensable in any era, and to respond to various requests in the field of fundamental technology development, we aim to introduce the latest equipment and contribute to research and development in Japan.