[Analysis Case] Evaluation of Impurities in Metal Wires
Visualizing the in-plane distribution of impurities such as atmospheric components with a field equivalent to SEM.
SIMS analysis can be applied to various shapes of samples beyond wafers and substrates. In this case study, we will introduce an example of evaluating the distribution of impurities in a wire. The results of evaluating the impurity distribution in the depth direction from the side of the wire (Figure 2) indicate that the impurity profiles of H, O, F, S, and Cl vary in intensity with depth, suggesting that they are localized within the wire. The elemental mapping of the wire cross-section (Figure 3) confirmed the localization of impurities within the wire.
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Applications/Examples of results
Trace concentration evaluation and product investigation.
