[Analysis Case] Evaluation of the Depth Distribution of B near the Si Surface using SIMS
High-precision B profile analysis through sample cooling.
The concentration distribution of boron (B) in silicon (Si), which significantly affects the characteristics of device design, can be evaluated with high sensitivity and high depth resolution through SIMS analysis. However, it has been found that under general analysis conditions, distortions occur in the concentration distribution of B due to measurement-related factors. In MST, it has been confirmed that sample cooling is effective for correcting these distortions, enabling a more accurate evaluation of the concentration distribution.
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Applications/Examples of results
Analysis of memory, LSI, and electronic components.