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[Analysis Case] Evaluation of the Depth Distribution of B near the Si Surface using SIMS

C0135.jpg

[Analysis Case] Evaluation of the Depth Distribution of B near the Si Surface using SIMS

C0135.jpg
C0135.jpg

High-precision B profile analysis through sample cooling.

The concentration distribution of boron (B) in silicon (Si), which significantly affects the characteristics of device design, can be evaluated with high sensitivity and high depth resolution through SIMS analysis. However, it has been found that under general analysis conditions, distortions occur in the concentration distribution of B due to measurement-related factors. In MST, it has been confirmed that sample cooling is effective for correcting these distortions, enabling a more accurate evaluation of the concentration distribution.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/36…

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Analysis of memory, LSI, and electronic components.

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[Analysis Case] Evaluation of the Depth Distribution of B near the Si Surface by SIMS_C0135

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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!

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