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Pre-treatment methods for trace element analysis on the wafer surface.

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Pre-treatment methods for trace element analysis on the wafer surface.

ICP-MS: Inductively Coupled Plasma Mass Spectrometry

In the process of confirming metal contamination adhered to the wafer surface after the formation of the SiO2 film, a method has traditionally been used where the SiO2 film is dissolved in acid as a pre-treatment for analysis, followed by the analysis of the solution. This method results in analysis that combines metal contamination on the very surface with that within the SiO2 film, making it unsuitable for analyzing only the metal contamination on the very surface. In MST, it is possible to evaluate the metal contamination elements on the wafer's very surface by dissolving only the metal elements adhered to the very surface without dissolving the SiO2 film during the pre-treatment.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/8/…

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Analysis of manufacturing equipment, parts, and environment.

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