Evaluation of metal contamination on the Si wafer surface
ICP-MS: Inductively Coupled Plasma Mass Spectrometry
The purpose of evaluating metal contamination on the surface of Si wafers using ICP-MS includes not only the contamination assessment of the Si wafers themselves but also the evaluation of contamination within semiconductor devices and the assessment of the working environment due to Si wafer exposure. Therefore, the analysis of the Si wafer surface is conducted for various purposes. ICP-MS analysis can sensitively obtain the amount of metal contamination on the surface of Si wafers, and it is also possible to specify the evaluation area according to the purpose.
basic information
For detailed data, please refer to the catalog.
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Applications/Examples of results
Analysis of manufacturing equipment, components, and environment.