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Evaluation of metal contamination on the Si wafer surface

b0233.jpg

Evaluation of metal contamination on the Si wafer surface

b0233.jpg
b0233.jpg

ICP-MS: Inductively Coupled Plasma Mass Spectrometry

The purpose of evaluating metal contamination on the surface of Si wafers using ICP-MS includes not only the contamination assessment of the Si wafers themselves but also the evaluation of contamination within semiconductor devices and the assessment of the working environment due to Si wafer exposure. Therefore, the analysis of the Si wafer surface is conducted for various purposes. ICP-MS analysis can sensitively obtain the amount of metal contamination on the surface of Si wafers, and it is also possible to specify the evaluation area according to the purpose.

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Analysis of manufacturing equipment, components, and environment.

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Metal Contamination Analysis of Si Wafer Surface_B0233

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