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[Analysis Case] Analysis of Metal Contamination in SiN Films

High-sensitivity analysis using ICP-MS.

In the solution that dissolves the SiN film (Si3N4) on the Si wafer, there is a Si matrix derived from the film in addition to the target impurity metal elements. Therefore, accurate and highly sensitive analysis cannot be performed directly on the dissolved solution itself. Thus, after dissolving the SiN film on the Si wafer, we enabled the analysis of impurity metal elements in the SiN film without the influence of the Si matrix by applying additional treatment. An example of conducting high-sensitivity analysis using ICP-MS with commercially available Si wafers with SiN films is provided.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/35…

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Analysis of manufacturing equipment and components.

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