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[Analysis Case] Depth Profile Concentration Analysis of Mg in Deep Ultraviolet LEDs

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[Analysis Case] Depth Profile Concentration Analysis of Mg in Deep Ultraviolet LEDs

Quantification of impurities in AlGaN with various Al compositions is possible.

To determine impurity concentrations using SIMS analysis, it is necessary to use a standard sample with the same composition as the analysis sample. By preparing various Al compositions of AlGaN standard samples for AlGaN used in ultraviolet LEDs and power devices, MST can achieve more accurate quantification of impurities. We will introduce a case where, after disassembling a commercially available deep ultraviolet LED, SIMS analysis was conducted to determine the concentration of the dopant Mg and the distribution of the main component Al composition. Measurement method: SIMS Product fields: Lighting, power devices, optical devices Analysis purposes: Trace concentration evaluation, impurity evaluation, distribution evaluation, product investigation For more details, please download the materials or contact us.

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Analysis of lighting, power devices, and optical devices.

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[Analysis Case] Depth Profile Concentration Analysis of Mg in Deep Ultraviolet LEDs_C0692

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