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[Analysis Case] Measurement of Impurity Concentration on the Surface and Inside of SiC Substrates

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[Analysis Case] Measurement of Impurity Concentration on the Surface and Inside of SiC Substrates

img_c0698_1.jpg
img_c0698_1.jpg img_c0698_2.jpg

Analysis of the substrate surface and interior is separated using ICP-MS and GDMS.

Impurities contained in semiconductor materials can affect product quality, leading to issues such as leakage current and early device failure. Therefore, understanding the amount of impurities in the materials is crucial for improving product quality. This document presents a case study on SiC substrates, which are gaining attention as power device materials, analyzing impurities adhered to the substrate surface using ICP-MS and impurities within the substrate using GDMS. Measurement methods: ICP-MS, GDMS Product fields: Power devices, manufacturing equipment, components Analysis purpose: Trace concentration evaluation For more details, please download the document or contact us.

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Analysis of power devices, manufacturing equipment, and components.

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[Analysis Case] Measurement of Impurity Concentration on the Surface and Inside of SiC Substrate_C0698

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