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[Analysis Case] Evaluation of Two-Dimensional Electron Gas Layer in Normally Off GaN HEMT

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[Analysis Case] Evaluation of Two-Dimensional Electron Gas Layer in Normally Off GaN HEMT

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img_c0702_2.jpg img_c0702_1.jpg

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GaN-based high electron mobility transistors, known as GaN HEMTs (High Electron Mobility Transistors), utilize an AlGaN/GaN heterostructure to achieve a two-dimensional electron gas layer (2DEG), resulting in high electron mobility. They are used in applications such as fast chargers, leveraging these characteristics. This document presents the disassembly and evaluation of normally-off GaN HEMT devices. We will introduce a case study that employs a combination of analytical methods to gather comprehensive insights about the samples. Measurement methods: SIMS, TEM, SCM, SMM. Product field: Power devices. Analysis objectives: Trace concentration measurement, shape evaluation, film thickness evaluation, structural evaluation, product investigation. For more details, please download the document or contact us.

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[Analysis Case] Evaluation of Two-Dimensional Electron Gas Layer in Normally Off GaN HEMT C0702

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