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[Analysis Case] Depth Direction Analysis of Components in SiON Ultra-Thin Films

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[Analysis Case] Depth Direction Analysis of Components in SiON Ultra-Thin Films

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img_C0264_1.jpg img_C0264_2.jpg img_C0264_3_HO-Si-O.jpg img_C0264_4_O-Si-O-Si-O.jpg img_C0264_5_Si-N-Si.jpg img_C0264_6_Si-Si.jpg

It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.

The SiON film used as the gate oxide film for Si transistors is formed by introducing nitrogen into the Si oxide film to suppress leakage current. To ensure a good interface characteristic with the substrate while maintaining the dielectric constant, it is necessary to strictly control the distribution of nitrogen in the SiON film. We will present a case study evaluating the distribution of silicon oxide and nitride in a 1nm thick SiON film using TOF-SIMS. TOF-SIMS has high depth resolution on the surface and can obtain molecular information with good sensitivity, allowing for a clear understanding of the compositional distribution in the ultra-thin SiON film.

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Measurement method: TOF-SIMS Product field: LSI and memory Analysis purpose: Evaluation of chemical bonding states and composition distribution

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Analysis of LSI and memory.

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[Analysis Case] Depth Direction Analysis of Components in SiON Ultra-Thin Films_C0264

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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!

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