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[Analysis Case] Depth Direction Analysis of Components in SiON Ultra-Thin Films

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[Analysis Case] Depth Direction Analysis of Components in SiON Ultra-Thin Films

It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.

The SiON film used as the gate oxide film for Si transistors is formed by introducing nitrogen into the Si oxide film to suppress leakage current. To ensure a good interface characteristic with the substrate while maintaining the dielectric constant, it is necessary to strictly control the distribution of nitrogen in the SiON film. We will present a case study evaluating the distribution of silicon oxide and nitride in a 1nm thick SiON film using TOF-SIMS. TOF-SIMS has high depth resolution on the surface and can obtain molecular information with good sensitivity, allowing for a clear understanding of the compositional distribution in the ultra-thin SiON film.

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Measurement method: TOF-SIMS Product field: LSI and memory Analysis purpose: Evaluation of chemical bonding states and composition distribution

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Analysis of LSI and memory.

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[Analysis Case] Depth Direction Analysis of Components in SiON Ultra-Thin Films_C0264

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