[Analysis Case] Three-Dimensional Distribution Evaluation of Dopants in MEMS Using SIMS
Imaging SIMS allows for the visualization of concentration distributions of trace elements in micro-regions.
We conducted three-dimensional imaging SIMS measurements of commercial MEMS products for B and As (measurement area: 75μm square, depth: approximately 1.5μm). After data processing, it is possible to extract surface distributions at arbitrary cross-sections and depths, depth direction distributions in arbitrary areas, and line profiles at arbitrary locations. Note: Since the sample is being excavated with an ion beam while capturing images in the depth direction, this constitutes destructive analysis.
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Applications/Examples of results
Analysis of LSI and memory.