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FIB low acceleration processing

FIB: Focused Ion Beam Processing

In the method for preparing thin film samples for TEM observation using FIB, high-energy Ga ions (acceleration voltage of 30 kV) are used, resulting in the formation of a damage layer on the processed surface, which causes a deterioration in the image quality of the TEM. By performing processing at a lower acceleration (2 kV) than conventional methods, the damage layer can be reduced, leading to improved image quality. By reducing the damage on the FIB processed surface through low-acceleration FIB processing, high-quality and reliable data can be obtained in TEM image observation and EELS measurements.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/18…

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For detailed data, please refer to the catalog.

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Applications/Examples of results

Shape evaluation, crystal structure evaluation, stress, strain evaluation.

FIB Low Acceleration Processing_B0111

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[Analysis Case] Cross-sectional Observation of Tooth Enamel Prisms_C0211

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