X-ray Absorption Fine Structure (XAFS)

XAFS is a method for analyzing the absorption spectrum obtained by irradiating a substance with X-rays.

- It is possible to evaluate the local structure (interatomic distances, coordination numbers) and chemical state (valence, coordination structure) around the target elements in the sample. - Measurements can be conducted regardless of the environment (high temperature, high pressure, atmosphere). - Measurements can be performed on various sample forms (solid, liquid, gas, thin films, amorphous materials, etc.). - A wide applicable concentration range (from major component elements to trace elements). - Non-destructive measurement. - Depending on the measurement method, it is possible to conduct measurements that are sensitive to the surface as well as bulk measurements.

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The absorption spectrum obtained by irradiating a substance with X-rays shows sharp rises (absorption edges) characteristic of the elements contained within the substance. The fine structure that appears around the absorption edge within approximately ±50 eV is called XANES (X-ray Absorption Near Edge Structure), while the oscillatory structure that appears on the high-energy side, around 1000 eV from the absorption edge, is referred to as EXAFS (Extended X-ray Absorption Fine Structure). The combined region of XANES and EXAFS is called XAFS (X-ray Absorption Fine Structure). XANES and EXAFS have different origins. XANES is due to the excitation of unoccupied inner-shell electron states and quasi-continuous states, while EXAFS arises from the interference of photoelectron waves emitted by X-ray irradiation and scattered photoelectron waves from neighboring atoms. Therefore, by conducting XAFS analysis, it is possible to obtain information about the electronic states of the target element in the substance and the bonding states with surrounding elements, providing insights into the chemical structure.

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Applications/Examples of results

- Evaluation of local structure and chemical state around trace dopants in semiconductors - Evaluation of local structure and chemical state around metal elements in oxide semiconductors - Evaluation of orientation of organic monolayers on substrates - Quantification of the sp2/(sp2 + sp3) ratio in amorphous carbon - Evaluation of local structure and chemical state during charge and discharge cycles of LIB cathode materials, etc.

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Please consult with us first. ★ We will start by proposing an analysis plan ★ Meetings at your company are, of course, possible. We will carefully explain the analysis results and leave no questions unanswered. Please contact us at 03-3749-2525 or info@mst.or.jp!
We will hold a visiting seminar. ★ We offer free seminars tailored to the needs of our customers with visiting engineers ★ Depending on your requests, we will introduce analysis techniques and explain analysis data. ◆ Example seminar content - A broad explanation of MST analysis methods - A detailed explanation of specific analysis methods from the principles - Explanation of the analysis data requested by the customer Please contact us at 03-3749-2525 or info@mst.or.jp!

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一般財団法人材料科学技術振興財団　MST

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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!

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