[Analysis Case] Structural Evaluation of Fine Transistors
High-resolution TEM observation using Cs-corrected TEM
By using a Cs-corrected TEM device that compensates for spherical aberration, it is possible to observe the cross-sectional structure of devices with high resolution. This case presents data from high-resolution (HR)-TEM observation and EDX elemental distribution analysis of commercially available MPU transistor components. Even for fine multilayer structures like FinFETs, it is possible to clearly observe the structure and elemental distribution of the devices using a Cs-corrected TEM.
basic information
For detailed data, please refer to the catalog.
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Applications/Examples of results
Analysis of LSI and memory.