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[Analysis Case] Evaluation of Copper (Cu) Oxide Film Thickness: Differences Due to Storage Environment

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C0372.png

[Analysis Case] Evaluation of Copper (Cu) Oxide Film Thickness: Differences Due to Storage Environment

It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.

Copper (Cu), used as wiring material, forms an oxide film in the air. Here, we present a case study evaluating the differences in film thickness due to variations in storage environments. Copper (Cu) wrapped in aluminum foil and copper (Cu) stored in a plastic bag were each kept for 40 days, and the oxide film thickness was measured using TOF-SIMS. Additionally, a continuous investigation over approximately 20 days confirmed reproducibility. TOF-SIMS allows for depth profiling analysis of inorganic materials such as oxides and metals. Measurement method: TOF-SIMS Product fields: Displays, LSI, Memory, Electronic components Analysis purpose: Evaluation of chemical bonding states For more details, please download the materials or contact us.

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Analysis of displays, LSI, memory, and electronic components.

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[Analysis Case] Evaluation of Copper (Cu) Oxide Film Thickness - Differences Due to Storage Environment_C0372

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