High-precision quantitative evaluation of impurities in SiGe.
SIMS: Secondary Ion Mass Spectrometry
In the quantitative and compositional evaluation of impurities in the semiconductor material SiGe using SIMS, the following considerations must be taken into account during analysis: ● If appropriate quantification corrections are not made according to the Ge concentration, the impurity quantification values may differ by more than 50% from the actual values. Standard samples corresponding to each composition are necessary for quantitative evaluation. ● It is known that the sputtering rates differ between Si and SiGe. In samples where the composition varies with depth, the sputtering rate changes with depth as well. At MST, high-precision compositional analysis is possible through the preparation of standard samples. Additionally, by using calibration curves, impurity analysis and sputtering rate corrections for each composition of SiGe can be performed.
basic information
For detailed data, please refer to the catalog.
Price information
-
Delivery Time
Applications/Examples of results
Analysis of LSI and memory.