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[Analysis Case] Low-Temperature PL Spectrum of Si After Ion Implantation Annealing Treatment

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[Analysis Case] Low-Temperature PL Spectrum of Si After Ion Implantation Annealing Treatment

c0434.jpg
c0434.jpg

It is possible to confirm the recovery of crystallinity due to irradiation defects and annealing.

In the fabrication of Si-based semiconductor devices, various processes such as ion implantation and annealing are performed. It is considered important to confirm the degree of irradiation defects and the extent of crystallinity recovery before and after these processes in order to control the manufacturing process. Photoluminescence (PL) measurements at low temperatures are one effective means of investigating these aspects. An example of PL measurements of samples that underwent ion implantation on a Si substrate followed by annealing treatment is presented.

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Analysis of solar cells, power devices, LSI, memory, and electronic components.

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[Analysis Case] Low-Temperature Photoluminescence Spectrum of Si Subjected to Ion Implantation and Annealing Treatment_C0434

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