[Analysis Case] Low-Temperature PL Spectrum of Si After Ion Implantation Annealing Treatment
It is possible to confirm the recovery of crystallinity due to irradiation defects and annealing.
In the fabrication of Si-based semiconductor devices, various processes such as ion implantation and annealing are performed. It is considered important to confirm the degree of irradiation defects and the extent of crystallinity recovery before and after these processes in order to control the manufacturing process. Photoluminescence (PL) measurements at low temperatures are one effective means of investigating these aspects. An example of PL measurements of samples that underwent ion implantation on a Si substrate followed by annealing treatment is presented.
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Applications/Examples of results
Analysis of solar cells, power devices, LSI, memory, and electronic components.