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[Analysis Case] Evaluation of Si-based IGBT Chip Cross-section by Low-Temperature Micro Photoluminescence Analysis

It is possible to confirm the influence of the lifetime killer from the cross-sectional direction.

IGBT (Insulated Gate Bipolar Transistor) is used in various products as a power semiconductor module, ranging from home appliances to industrial equipment. Lifetime control is implemented for performance improvement in IGBTs, but this control is achieved by creating defects (lifetime killers) in the drift layer. By conducting low-temperature micro-PL analysis from the cross-section, it is possible to gain insights into lifetime killers.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/41…

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For detailed data, please refer to the catalog.

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Analysis of power devices, LSI, memory, and electronic components.

[Analysis Case] Evaluation of Si-based IGBT Chip Cross-section by Low-Temperature Micro Photoluminescence Analysis_C0485

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