Regarding interface and depth direction resolution
SIMS: Secondary Ion Mass Spectrometry
The SIMS analysis profile of the interface between different materials changes with a certain width in the depth direction. This is due to the characteristics of SIMS analysis, which are influenced by ion beam mixing and the roughness of the sputtered surface. The detected impurities represent averaged information up to the mixed depth, detecting ions from regions with a width in the depth direction. Therefore, the interface position is generally defined as the location where the ion intensity of the main constituent elements reaches 50%.
basic information
For detailed data, please refer to the catalog.
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Applications/Examples of results
Analysis of solar cells, displays, oxide semiconductors, power devices, LSI, and memory.