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Regarding interface and depth direction resolution

SIMS: Secondary Ion Mass Spectrometry

The SIMS analysis profile of the interface between different materials changes with a certain width in the depth direction. This is due to the characteristics of SIMS analysis, which are influenced by ion beam mixing and the roughness of the sputtered surface. The detected impurities represent averaged information up to the mixed depth, detecting ions from regions with a width in the depth direction. Therefore, the interface position is generally defined as the location where the ion intensity of the main constituent elements reaches 50%.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/45…

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For detailed data, please refer to the catalog.

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Analysis of solar cells, displays, oxide semiconductors, power devices, LSI, and memory.

Interface and depth direction resolution_B0243

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