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[Analysis Case] Surface Shape Analysis of GaN Substrates

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[Analysis Case] Surface Shape Analysis of GaN Substrates

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Visualization of step-terrace structures by AFM.

Gallium nitride (GaN), a wide bandgap semiconductor, is used in a wide range of fields such as power devices and communication/optical devices. When fabricating devices, the shape and roughness of the wafer surface significantly impact device performance. During the growth of GaN wafers, a step-terrace structure is formed on the surface due to stress effects from lattice mismatch with the supporting substrate. This document introduces a case where the step-terrace structure of the GaN substrate surface was visualized using AFM, and the terrace width, step height, surface roughness, and off-angle were evaluated. Measurement method: AFM Product fields: Power devices, electronic components, lighting Analysis purpose: Shape evaluation, structural evaluation For more details, please download the document or contact us.

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Analysis of power devices, electronic components, and lighting.

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[Analysis Case] Surface Shape Analysis of GaN Substrate_C0708

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