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［SCM］［SNDM］

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［SCM］［SNDM］

A0011_走査型静電容量顕微鏡法_SCM・走査型非線形誘電率顕微鏡法_SNDM_ページ_1.jpg
A0011_走査型静電容量顕微鏡法_SCM・走査型非線形誘電率顕微鏡法_SNDM_ページ_1.jpg 打ち合わせ.jpg セミナー.jpg

Visualizing career distribution in two dimensions

SCM/SNDM is a method that scans the surface of semiconductors using a conductive probe to visualize the carrier distribution in two dimensions. - SCM is sensitive to carrier concentrations of approximately 10^15 to 10^20 cm^-3, while SNDM is sensitive to concentrations of about 10^14 to 10^20 cm^-3. - It is possible to identify the polarity of the semiconductor (p-type/n-type). - A signal correlated with carrier concentration can be obtained, but quantitative evaluation is not possible. - AFM images can also be acquired.

Related Link - https://www.mst.or.jp/method/tabid/157/Default.asp…

basic information

■Visualization of Carrier Distribution Due to Changes in Electric Capacitance The contact point between the probe and the semiconductor forms a MOS structure, which can be regarded as a system where the capacitance of the oxide film on the semiconductor surface (COx) is connected to the capacitance of the semiconductor (CD). When a high-frequency voltage (VAC) is applied to this system, the equivalent capacitance (C) fluctuates. This fluctuation is nothing but the vibration of carriers in the semiconductor directly beneath the probe, and the magnitude of the fluctuation depends on the carrier concentration directly beneath the probe. By scanning the probe and measuring the modulation signal of the high-frequency resonator caused by the fluctuation (ΔC) of the equivalent capacitance (C), the carrier distribution can be visualized in two dimensions.

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Applications/Examples of results

- Determination of p/n polarity of the diffusion layer - Evaluation of the diffusion layer shape at specific locations within the LSI - Evaluation of the diffusion layer shape of individual semiconductors (bipolar transistors, diodes, DMOS, IGBTs, etc.) - Evaluation of the diffusion layer shape of defective areas in semiconductor devices (injection anomalies, leakage defects, etc.) - Evaluation of the diffusion layer shape of TFTs (visualization of the LDD region) - Evaluation of polarization in ferroelectric materials

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