[Analysis Case] Observation of Heterojunction Interface in CIGS Thin-Film Solar Cells
Evaluation of the crystal structure of the high-resistance layer at the CdS/CIGS junction interface using ultra-high-resolution STEM.
We directly observed the CdS/CIGS heterojunction interface using a Cs-corrected STEM device. TEM images, high-resolution HAADF-STEM images, and simulations using first-principles calculations confirmed that CIGS and CdS are heteroepitaxially joined.
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Analysis of solar cells.