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[Analysis Case] Evaluation of Silicon Oxide Film by XAFS

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[Analysis Case] Evaluation of Silicon Oxide Film by XAFS

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c0439.jpg

Local structural analysis around silicon, quantification of intermediate oxides, evaluation of bulk and interfaces.

Silicon oxide films are widely used as gate dielectrics in MOS devices and as anode materials in lithium-ion secondary batteries, but it is known that the presence of intermediate oxides and the bonding states at the interface have a significant impact on device characteristics. XAFS measurements using synchrotron radiation can detect information from a depth of several tens of nanometers from the sample surface, allowing for non-destructive analysis of the structure and bonding states in both bulk and at the interface. This document presents a case study investigating the presence of intermediate oxides in silicon oxide films using XAFS.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/39…

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Analysis of solar cells, secondary batteries, displays, oxide semiconductors, power devices, and electronic components.

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[Analysis Case] Evaluation of Silicon Oxide Film by XAFS_C0439

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