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[Analysis Case] Band Gap Evaluation of Oxidized and Nitrided Thin Films

C0462.jpg

[Analysis Case] Band Gap Evaluation of Oxidized and Nitrided Thin Films

C0462.jpg
C0462.jpg

High-precision band gap evaluation is possible through combined analysis of XAFS and XPS.

The band gap of thin film samples has been measured using analytical methods such as UV-Vis, PL, and XPS, but the cases that could be evaluated were limited due to constraints related to the sample structure, such as materials, film thickness, and substrates. This time, through the combined analysis of XAFS and XPS, it has become possible to reduce the constraints of the sample structure and achieve a higher precision band gap evaluation than before. This method is particularly effective for the evaluation of various oxide and nitride films. This document presents a case study on the band gap evaluation of silicon nitride (SiN) films. Measurement methods: XAFS, XPS. Product fields: solar cells, lighting, oxide semiconductors, power devices. Analysis purpose: evaluation of electronic states. For more details, please download the document or contact us.

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Analysis of solar cells, lighting, oxide semiconductors, and power devices.

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[Analysis Case] Band Gap Evaluation of Oxidized and Nitrided Thin Films_C0462

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